MoS2 dual-gate transistors with electrostatically doped contacts
Authors: Liao, FY; Sheng, YC; Guo, ZX; Tang, HW; Wang, Y; Zong, LY; Chen, XY; Riaud, A; Zhu, JH; Xie, YF; Chen, L; Zhu, H; Sun, QQ; Zhou, P;
Jiang, XW; Wan, J; Bao, WZ; Zhang, DW
Volume: 12 Issue: 10 Pages: 2515-2519 Published: OCT 2019 Language: English Document type: Article
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier(SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3 x 10(7) and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.